Course Outlines and Prerequisites

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EE535 - MOS Device Physics and Technology

  • Instructor:
  • Course Web Page: EE535 - MOS Device Physics and Technology
  • COURSE INFORMATON

    Course Title

    Code

    Semester

    C +P + L  Hour

    Credits

    ECTS

    MOS Device Physics and Technology

    EE535

    Spring

    3 + 0 + 0

    3

    7

     

    Prerequisites

    None

     

    Language of Instruction

    English

    Course Level

    Master’s

    Course Type

    Elective

    Course Coordinator

    Uğur Çilingiroğlu

    Instructors

    Uğur Çilingiroğlu

    Assistants

     

    Goals

    Familiarizing the student with the MOSFET modeling constraints emanating from solid-state physics; presenting simultaneous solutions to the Poisson’s equation and current and continuity equations under these constraints; applying the outcome to modeling the static and dynamic aspects of MOSFET operation; and, deriving guidelines for the structural optimization of MOSFET structures.

    Content

    Fundamental concepts and equations. Thermal equilibrium. Nonequilibrium. Basic MOSFET structure. MOSFET under bias. Fundamentals of structural optimization. Secondary effects. MOSFET dynamics.

     

    Learning Outcomes

    Program Outcomes

    Teaching Methods

    Assessment Methods

    1)    Familiarity with the most general solid-state device equations, and ability to solve them with appropriate boundary conditions; namely, Poisson’s equation, current equations, and continuity equations,

     

    3,5,6,7

     

     

     

    1,2

     

    A

    2)    Mastery of MOSFET structure,

    5,7

    1,2

    A

    3)    Acquisition of design skills for optimizing the MOSFET structure,

    3,4,6,7

    1,2

    A

    4)    Familiarity with the secondary effects in MOSFET operation,

    5,6,7

    1,2

    A

    5)    Mastery of MOSFET dynamic operation.

    5,6,7

    1,2

    A

     

    Teaching Methods:

    1: Lecture,  2: Problem Solving,  3: Simulation,  4: Seminar,  5: Laboratory,

    6: Term Research Paper

    Assessment Methods:

    A: Exam, B: Quiz, C: Experiment, D: Homework, E: Project

     

     

    COURSE CONTENT

    Week

    Topics

    Study Materials

    1

    Constituents of a semiconductor crystal. Poisson’s equation.

    Textbook

    2

    Current equations. Continuity equations. Energy-band diagrams

    Textbook

    3

    Equilibrium properties of semiconductors. Analysis in equilibrium.

    Textbook

    4

    Injection level. Shockley-Read-Hall theory of trapping. Analysis of bulk regions. Extending Fermi formalism to nonequilibrium.

    Textbook

    5

    Basic MOSFET structure.

    Textbook

    6

    Fundamentals of nonequilibrium analysis. Analysis of surface space-charge regions.

    Textbook

    7

    A general strong-inversion model.

    Textbook

    8

    Simplified strong-inversion models.

    Textbook

    9

    Subthreshold model.

    Textbook

    10

    p-channel MOSFET

    Textbook

    11

    Velocity saturation. Channel-length modulation. Punch-through.

    Textbook

    12

    Short-channel and narrow-channel effects.

    Textbook

    13

    Impact ionization and avalanche breakdown.

    Textbook

    14

    MOSFET dynamics.

    Textbook

     

    RECOMMENDED SOURCES

    Textbook

    Systematic Analysis of Bipolar and MOS Transistors, Ugur Cilingiroglu, Artech House, Boston, 1993.

    Additional Resources

     

     

    MATERIAL SHARING

    Documents

     

    Assignments

     

    Exams

     

     

    ASSESSMENT

    IN-TERM STUDIES

    NUMBER

    PERCENTAGE

    Midterm I

    1

    25/50

    Midterm II

    1

    25/50

    Homework Assignment

      

    Total

     

    50/50

    CONTRIBUTION OF FINAL EXAMINATION TO OVERALL GRADE

     

    50

    CONTRIBUTION OF IN-TERM STUDIES TO OVERALL GRADE

     

    50

    Total

     

    100

     

     

    COURSE CATEGORY

    Field Course

     

    COURSE'S CONTRIBUTION TO PROGRAM

    No

     Program Learning Outcomes

    Contribution

    1

    2

    3

    4

    5

     

    1

    Can reach information in breadth and depth, and can evaluate, interpret and apply this information to scientific research in the area of Electrical and Electronics Engineering.

         

    2

    Can complete and apply information with scientific methods using limited or missing data; can integrate information from different disciplines.

         

    3

    Sets up Electrical and Electronics Engineering problems, develops and implements innovative methods for their solutions.

     

        

    4

    Develops new and/or original ideas and methods; finds innovative solutions to the system, component, or process design.

     

        

    5

    Has comprehensive knowledge about the state-of-the-art techniques and methods in Electrical and Electronics Engineering and their limitations.

       

      

    6

    Can design and conduct research of analytical, modeling or experimental orientation; can solve and interpret complex cases that come up during this process.

       

      

    7

    Can communicate verbally and in writing in one foreign language (English) at the General Level B2 of the European Language Portfolio.

        

     

    8

    Can assume leadership in multi-disciplinary teams; can develop solutions in complex situations, and take responsibility.

         

    9

    Can systematically and openly communicate in national and international venues the proceedings and conclusions of the work he/she performs in Electrical and Electronics Engineering.

         

    10

    Respects social, scientific and ethical values in all professional activities performed during the collection, interpretation and announcement phases of data.

         

    11

    Is aware of new and emerging applications in Electrical and Electronics Engineering; investigates and learns them, whenever necessary.

         

    12

    Can identify the social and environmental aspects of Electrical and Electronics Engineering applications.

     

     

     

     

     

     

    ECTS ALLOCATED BASED ON STUDENT WORKLOAD BY THE COURSE DESCRIPTION

    Activities

    Quantity

    Duration
    (Hour)

    Total
    Workload
    (Hour)

    Course Duration (including 2 midterms: 14xtotal lecture hours)

    14

    3

    42

    Hours for off-the-classroom study (Pre-study, practice)

      

    125

    Midterm I

    1

    2

    2

    Midterm II

    1

    2

    2

    Homework assignment

       

    Final examination

    1

    2

    2

    Total Work Load

      

    173

    Total Work Load / 25 (h)

     

     

    6.92

    ECTS Credit of the Course

     

     

    7

     

  • Syllabus
  • Course Outline:

    Fundamental concepts and equations. Thermal equilibrium. Nonequilibrium. Basic MOSFET structure. MOSFET under bias. Fundamentals of structural optimization. Secondary effects. MOSFET dynamics.